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BUZ111SL
SPP80N05L
SIPMOS (R) Power Transistor
* N channel * Enhancement mode * Logic Level * Avalanche-rated * dv/dt rated * 175C operating temperature * also in SMD available
Pin 1 Pin 2 Pin 3
G
D
S
Type
VDS 55 V
ID 80 A
RDS(on) 0.01
Package
Ordering Code
BUZ111SL
TO-220 AB
Q67040-S4003-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TC = 100 C
ID
A 80
Pulsed drain current
TC = 25 C
IDpuls
320
E AS
Avalanche energy, single pulse
ID = 80 A, V DD = 25 V, RGS = 25 L = 220 H, Tj = 25 C
mJ
700
IAR E AR
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt
IS = 80 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C
80 25
A mJ kV/s
dv/dt
6
V GS P tot
Gate source voltage Power dissipation
TC = 25 C
14
250
V W
Semiconductor Group
1
28/Jan/1998
BUZ111SL
SPP80N05L
Maximum Ratings Parameter Symbol Values Unit
Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... + 175 -55 ... + 175
C
0.6 62
55 / 175 / 56
K/W
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit
Drain- source breakdown voltage
V GS = 0 V, ID = 0.25 mA, Tj = 25 C
V (BR)DSS
V 55 -
Gate threshold voltage
V GS=V DS, ID = 240 A
V GS(th)
1.2
IDSS
1.6
2 A
Zero gate voltage drain current
V DS = 50 V, V GS = 0 V, Tj = -40 C V DS = 50 V, V GS = 0 V, Tj = 25 C V DS = 50 V, V GS = 0 V, Tj = 150 C
IGSS
0.1 -
0.1 1 100 nA
Gate-source leakage current
V GS = 20 V, VDS = 0 V
RDS(on)
10
100
Drain-Source on-resistance
V GS = 4.5 V, ID = 80 A V GS = 10 V, ID = 80 A
0.0085 0.0055 0.01 0.007
Semiconductor Group
2
28/Jan/1998
BUZ111SL
SPP80N05L
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit
Dynamic Characteristics
Transconductance
V DS 2 * ID * RDS(on)max = 2 V, ID = 80 A
gfs
S 30 95 pF 3850 4800
Input capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
Ciss
Output capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
Coss
Crss
1090
1357
Reverse transfer capacitance
V GS = 0 V, V DS = 25 V, f = 1 MHz
td(on)
570
715 ns
Turn-on delay time
V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 1.3
tr
30
45
Rise time
V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 1.3
td(off)
37
56
Turn-off delay time
V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 1.3
tf
70
105
Fall time
V DD = 30 V, VGS = 4.5 V, ID = 80 A RG = 1.3
Qg(th)
36
55 nC
Gate charge at threshold
V DD = 40 V, ID 0.1 A, V GS =0 to 1 V
Qg(5)
3.8
5.7
Gate charge at 5.0 V
V DD = 40 V, ID = 80 A, VGS =0 to 5 V
Qg(total)
92
138
Gate charge total
V DD = 40 V, ID = 80 A, VGS =0 to 10 V
V (plateau)
155
232 V
Gate plateau voltage
V DD = 40 V, ID = 80 A
-
3.4
-
Semiconductor Group
3
28/Jan/1998
BUZ111SL
SPP80N05L
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit
Inverse diode continuous forward current
TC = 25 C
IS
A 80
Inverse diode direct current,pulsed
TC = 25 C
ISM
V SD
-
320 V
Inverse diode forward voltage
V GS = 0 V, IF = 160 A
trr
1.25
1.8 ns
Reverse recovery time
V R = 30 V, IF=lS, diF/dt = 100 A/s
Qrr
105
157 C
Reverse recovery charge
V R = 30 V, IF=lS, diF/dt = 100 A/s
-
0.31
0.47
Semiconductor Group
4
28/Jan/1998
BUZ111SL
SPP80N05L
Power dissipation Ptot = (TC)
Drain current ID = (TC) parameter: VGS 4 V
90 A
260 W 220 Ptot 200 180 160 140 120 100 80 60 40 ID
70 60 50 40 30 20 10
20 0 0 20 40 60 80 100 120 140 C 180 0 0 20 40 60 80 100 120 140 C 180
TC
TC
Safe operating area ID = (VDS) parameter: D = 0, TC = 25C
10 3
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 0 K/W
D
DS
A
DS (o n)
t = 29.0s p
/I
ID 10 2
ZthJC
100 s
R
=
10 -1
V
10 -2
D = 0.50
1 ms
10
-3
0.20 0.10
10
1 10 ms
0.05 10 -4 single pulse 0.02 0.01
DC
10 0 0 10
10
1
V 10
2
10 -5 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
VDS
tp
Semiconductor Group
5
28/Jan/1998
BUZ111SL
SPP80N05L
Typ. output characteristics ID = (VDS) parameter: tp = 80 s
180 A ID 140 120 100 80 60 40 20 0
a c
VGS [V] a 2.5 b 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0
Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C
0.032
Ptot = 250W
k l j i hg f
e
RDS (on) 0.024
a
b
c
dc
d e f g h i j k l
0.020
0.016
0.012
d e f hg j ki
a 2.5 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i 6.5 7.0 j 8.0 k 10.0
0.008
b
0.004 VGS [V] = 0.000 V 5.0 0 20 40 60 80 100 A 140
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS
ID
Typ. transfer characteristics ID = f (V GS)
parameter: tp = 80 s
VDS2 x ID x RDS(on)max
100
I
A
D
60
40
20
0 0
1
2
3
4
5
6
7
8
V
VGS
10
Semiconductor Group
6
28/Jan/1998
BUZ111SL
SPP80N05L
Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 80 A, VGS = 4.5 V
0.032
Gate threshold voltage
V GS(th)= f (Tj)
parameter:VGS=VDS,ID = 240A
3.0 V 2.6
VGS(th)
RDS (on) 0.024
2.4 2.2 2.0
0.020
1.8 1.6 98% 1.4 1.2 1.0
max
0.016 typ
0.012
0.008
0.8 0.6
0.004 0.000 -60 -20 20 60 100 C 180
0.4 0.2 0.0 -60 -20 20 60 100 140 V
Tj
typ
min
200
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 1
Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s
10 3
nF
C
Ciss
A IF
10 0
Coss Crss
10 2
10 -1
10 1 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%)
10 -2 0
5
10
15
20
25
30
V
VDS
40
10 0 0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
Semiconductor Group
7
28/Jan/1998
BUZ111SL
SPP80N05L
Avalanche energy EAS = (Tj) parameter: ID = 80 A, VDD = 25 V RGS = 25 , L = 220 H
750 mJ 650 EAS 600 550 500 450 400 350 300 250 200 150 100 50 0 20 40 60 80 100 120 140 C 180
Typ. gate charge VGS = (QGate) parameter: ID puls = 80 A
16
V VGS
12
10
8 0,2 VDS max 6 0,8 VDS max
4
2 0 0 40 80 120 160 nC 220
Tj
Q Gate
Drain-source breakdown voltage V(BR)DSS = (Tj)
65
V V(BR)DSS
61
59
57
55
53
51 49 -60
-20
20
60
100
C
180
Tj
Semiconductor Group
8
28/Jan/1998

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